Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
|Title||Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE|
|Publication Type||Journal Article|
|Year of Publication||2017|
|Authors||Li, X, Jordan, MB, Ayari, T, Sundaram, S, Gmili, YEl, Alam, S, Alam, M, Patriarche, G, Voss, PL, Salvestrini, JPaul, Ougazzaden, A|
|Date Published||APR 11|
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1 similar to 2.5 mu m-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/ sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 +/- 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.