Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

TitleFlexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
Publication TypeJournal Article
Year of Publication2017
AuthorsLi, X, Jordan, MB, Ayari, T, Sundaram, S, Gmili, YEl, Alam, S, Alam, M, Patriarche, G, Voss, PL, Salvestrini, JPaul, Ougazzaden, A
JournalSCIENTIFIC REPORTS
Volume7
Date PublishedAPR 11
ISSN2045-2322
Abstract

Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1 similar to 2.5 mu m-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/ sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 +/- 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.

DOI10.1038/s41598-017-00865-7
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