Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates
|Title||Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates|
|Publication Type||Journal Article|
|Year of Publication||2017|
|Authors||Puybaret, R, Rogers, DJ, Gmili, YEl, Sundaram, S, Jordan, MB, Li, X, Patriarche, G, Teherani, FH, Sandana, EV, Bove, P, Voss, PL, McClintock, R, Razeghi, M, Ferguson, I, Salvestrini, J-P, Ougazzaden, A|
|Date Published||MAY 12|
Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.