Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

TitleNanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates
Publication TypeJournal Article
Year of Publication2017
AuthorsPuybaret, R, Rogers, DJ, Gmili, YEl, Sundaram, S, Jordan, MB, Li, X, Patriarche, G, Teherani, FH, Sandana, EV, Bove, P, Voss, PL, McClintock, R, Razeghi, M, Ferguson, I, Salvestrini, J-P, Ougazzaden, A
JournalNANOTECHNOLOGY
Volume28
Date PublishedMAY 12
ISSN0957-4484
Abstract

Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.

DOI10.1088/1361-6528/aa6a43
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