Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
Submitted by patriarche on Tue, 2018-10-30 18:41
Title | Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE |
Publication Type | Journal Article |
Year of Publication | 2017 |
Authors | Li, X, Jordan, MB, Ayari, T, Sundaram, S, Gmili, YEl, Alam, S, Alam, M, Patriarche, G, Voss, PL, Salvestrini, JPaul, Ougazzaden, A |
Journal | Scientific Reports |
Volume | 7499107561448410816654109109613331710310136626274584421061179899 |
Issue | 1 |
Date Published | Jan-12-2017 |
URL | http://www.nature.com/articles/s41598-017-00865-7http://www.nature.com/articles/s41598-017-00865-7.pdfhttp://www.nature.com/articles/s41598-017-00865-7.pdfhttp://www.nature.com/articles/s41598-017-00865-7 |
DOI | 10.1038/s41598-017-00865-7 |
Short Title | Sci Rep |
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