Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

TitleMask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates
Publication TypeJournal Article
Year of Publication2017
AuthorsY. Gmili, E, Bonanno, PL, Sundaram, S, Li, X, Puybaret, R, Patriarche, G, Pradalier, C, Decobert, J, Voss, PL, Salvestrini, J-P, Ougazzaden, A
JournalOptical Materials Express
Volume711010059898109159105613924752611097967642024116251072988101784271797176109253
Issue2
Pagination376
Date PublishedJan-01-2017
URLhttps://www.osapublishing.org/abstract.cfm?URI=ome-7-2-376https://www.osapublishing.org/viewmedia.cfm?URI=ome-7-2-376&seq=0
DOI10.1364/OME.7.000376
Short TitleOpt. Mater. Express
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