Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration

TitleThreading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
Publication TypeJournal Article
Year of Publication2017
AuthorsFahed, M, Desplanque, L, Troadec, D, Patriarche, G, Wallart, X
JournalJournal of Crystal Growth
Volume477
Pagination45 - 49
Date PublishedJan-11-2017
ISSN00220248
URLhttps://linkinghub.elsevier.com/retrieve/pii/S0022024816308892https://api.elsevier.com/content/article/PII:S0022024816308892?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0022024816308892?httpAccept=text/plain
DOI10.1016/j.jcrysgro.2016.12.029
Short TitleJournal of Crystal Growth
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