Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

TitleNondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure
Publication TypeJournal Article
Year of Publication2015
AuthorsPateras, AI, Allain, M, Godard, P, Largeau, L, Patriarche, G, Talneau, A, Pantzas, K, Burghammer, M, Minkevich, AA, Chamard, V
JournalPHYSICAL REVIEW B
Volume92
Date PublishedNOV 13
ISSN2469-9950
Abstract

We report the three-dimensional (3D) mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample preparation. Our approach takes advantage of 3D x-ray Bragg ptychography combined with an optimized inversion process. The excellent agreement with the sample nominal structure validates the reconstruction while the evidence of spatial fluctuations hardly observable by other means underlines the specificities of Bragg ptychography.

DOI10.1103/PhysRevB.92.205305