Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires

TitlePressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires
Publication TypeJournal Article
Year of Publication2016
AuthorsChauvin, N, Mavel, A, Patriarche, G, Masenelli, B, Gendry, M, Machon, D
JournalNANO LETTERS
Volume16
Pagination2926-2930
Date PublishedMAY
ISSN1530-6984
Abstract

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of alpha(A) = 88.2 +/- 0.5 meV/GPa and alpha(B) = 89.3 +/- 0.5 meV/GPa with a small sublinear term of beta(A) = beta(B) = -2.7 +/- 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 +/- 0.04 and -6.2 +/- 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

DOI10.1021/acs.nanolett.5b04646
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