Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

TitleLarge-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy
Publication TypeJournal Article
Year of Publication2016
AuthorsLi, X, Sundaram, S, Gmili, YEl, Ayari, T, Puybaret, R, Patriarche, G, Voss, PL, Salvestrini, JPaul, Ougazzaden, A
JournalCRYSTAL GROWTH & DESIGN
Volume16
Pagination3409-3415
Date PublishedJUN
ISSN1528-7483
Abstract

This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (similar to 10(6) cm(-1)) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination-at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced, van der Waals heterostructures, and deep UV photonics.

DOI10.1021/acs.cgd.6b00398
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