Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy
|Title||Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy|
|Publication Type||Journal Article|
|Year of Publication||2016|
|Authors||Li, X, Sundaram, S, Gmili, YEl, Ayari, T, Puybaret, R, Patriarche, G, Voss, PL, Salvestrini, JPaul, Ougazzaden, A|
|Journal||CRYSTAL GROWTH & DESIGN|
This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (similar to 10(6) cm(-1)) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination-at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced, van der Waals heterostructures, and deep UV photonics.