Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

TitleStudy of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst
Publication TypeJournal Article
Year of Publication2017
AuthorsMavel, A, Chauvin, N, Regreny, P, Patriarche, G, Masenelli, B, Gendry, M
JournalJOURNAL OF CRYSTAL GROWTH
Volume458
Pagination96-102
Date PublishedJAN 15
ISSN0022-0248
Abstract

The nucleation and the structural and optical properties of InP nanowires (NWs) grown on Si(111) by molecular beam epitaxy using the vapor-liquid-solid method with gold-indium droplets as catalyst are investigated as a function of the temperature of the formation of the catalyst droplets and of the NW growth time. It is highlighted a complex behavior of the gold-indium catalyst droplets depending on the temperature. It is then shown than an InP pyramid-like pedestal is formed prior to the NW growth. When the temperature of formation of the catalyst droplets is lower than 550 degrees C, almost only vertically standing pure wurtzite InP NWs are grown on Si(111).

DOI10.1016/j.jcrysgro.2016.11.011
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