Biblio

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Filters: Author is Ougazzaden, Abdallah  [Clear All Filters]
2017
X. Li, Jordan, M. B., Ayari, T., Sundaram, S., Gmili, Y. El, Alam, S., Alam, M., Patriarche, G., Voss, P. L., Salvestrini, J. Paul, and Ougazzaden, A., Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE, Scientific Reports, vol. 7499107561448410816654109109613331710310136626274584421061179899, no. 1, 2017.
X. Li, Jordan, M. B., Ayari, T., Sundaram, S., Gmili, Y. El, Alam, S., Alam, M., Patriarche, G., Voss, P. L., Salvestrini, J. Paul, and Ougazzaden, A., Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE, SCIENTIFIC REPORTS, vol. 7, 2017.
T. Ayari, Bishop, C., Jordan, M. B., Sundaram, S., Li, X., Alam, S., ElGmili, Y., Patriarche, G., Voss, P. L., Salvestrini, J. Paul, and Ougazzaden, A., Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications, Scientific Reports, vol. 7873891548410851650354354, no. 1, 2017.
R. Puybaret, Rogers, D. J., Gmili, Y. El, Sundaram, S., Jordan, M. B., Li, X., Patriarche, G., Teherani, F. H., Sandana, E. V., Bove, P., Voss, P. L., McClintock, R., Razeghi, M., Ferguson, I., Salvestrini, J. - P., and Ougazzaden, A., Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates, Nanotechnology, vol. 28, no. 19, p. 195304, 2017.
R. Puybaret, Rogers, D. J., Gmili, Y. El, Sundaram, S., Jordan, M. B., Li, X., Patriarche, G., Teherani, F. H., Sandana, E. V., Bove, P., Voss, P. L., McClintock, R., Razeghi, M., Ferguson, I., Salvestrini, J. - P., and Ougazzaden, A., Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates, NANOTECHNOLOGY, vol. 28, 2017.